HWiNFO64 Version 3.96-1640

Memory --------------------------------------------------------------------

 [General information]
  Total Memory Size:                      4 GBytes
  Total Memory Size [MB]:                 4096
 [Current Performance Settings]
  Current Memory Clock:                   328.1 MHz
  Current Timing (tCAS-tRCD-tRP-tRAS):    6.0-6-6-18
  Memory Runs At:                         Dual-Channel
  Command Rate:                           2T
  Write to Read Delay (tWR_RD) Same Rank (tWTR): 3T
  Write to Precharge Delay (tWTP/tWR):    6T
  Row Cycle Time (tRC):                   26T
  Four Activate Window (tFAW):            18T

Row: 0 - 2048 MB PC2-6400 DDR2-SDRAM Melco                    -------------

 [General Module Information]
  Module Number:                          0
  Module Size:                            2048 MBytes
  Memory Type:                            DDR2-SDRAM
  DIMM Type:                              Regular Unbuffered (UDIMM) 
  Error Check/Correction:                 None
  Memory Speed:                           400.0 MHz (PC2-6400)
  Module Manufacturer:                    Melco
  Module Model:                                             
  Serial Number:                          N/A
  Manufacturing Date:                     Unknown
 [Module Characteristics]
  Module Width:                           64-bits
  Module Voltage:                         SSTL 1.8V
  SPD Revision:                           1.2
  Number Of Ranks:                        2
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
 [Module timing]
  Supported Burst Lengths:                4, 8
  Refresh Rate:                           Reduced 0.5x (7.8 us)
  Supported CAS Latencies (tCAS):         6.0, 5.0, 4.0
  Min. RAS-to-CAS Delay (tRCD):           12.50 ns
  Min. Row Precharge Time (tRP):          12.50 ns
  Min. RAS Pulse Width (tRAS):            45 ns
  Supported Module Timing at 400.0 MHz:   6.0-5-5-18
  Supported Module Timing at 400.0 MHz:   5.0-5-5-18
  Supported Module Timing at 266.7 MHz:   4.0-4-4-12
  Min. Row-Activate To Row-Activate Delay (tRRD): 7.50 ns
  Write Recovery Time (tWR):              15.00 ns
  Internal write to read command delay (tWTR): 7.50 ns
  Internal read to precharge command delay (tRTP): 7.50 ns
  Minimum Activate to Activate/Refresh Time (tRC): 57.50 ns
  Minimum Refresh to Activate/Refresh Command Period (tRFC): 127.50 ns
  Address and Command Setup Time Before Clock (tIS): 0.17 ns
  Address and Command Setup Time After Clock (tIH): 0.20 ns
  Data Input Setup Time Before Strobe (tDS): 0.05 ns
  Data Input Setup Time After Strobe (tDH): 0.12 ns

Row: 1 - 2048 MB PC2-6400 DDR2-SDRAM Samsung M3 78T5663RZ3-CF7  -----------

 [General Module Information]
  Module Number:                          1
  Module Size:                            2048 MBytes
  Memory Type:                            DDR2-SDRAM
  DIMM Type:                              Regular Unbuffered (UDIMM) 
  Error Check/Correction:                 None
  Memory Speed:                           400.0 MHz (PC2-6400)
  Module Manufacturer:                    Samsung
  Module Model:                           M3 78T5663RZ3-CF7 
  Serial Number:                          2294376596
  Manufacturing Date:                     Year: 2009, Week: 4
 [Module Characteristics]
  Module Width:                           64-bits
  Module Voltage:                         SSTL 1.8V
  SPD Revision:                           1.2
  Number Of Ranks:                        2
  Row Address Bits:                       14
  Column Address Bits:                    10
  Number Of Banks:                        8
 [Module timing]
  Supported Burst Lengths:                4, 8
  Refresh Rate:                           Reduced 0.5x (7.8 us)
  Supported CAS Latencies (tCAS):         6.0, 5.0, 4.0
  Min. RAS-to-CAS Delay (tRCD):           15.00 ns
  Min. Row Precharge Time (tRP):          15.00 ns
  Min. RAS Pulse Width (tRAS):            45 ns
  Supported Module Timing at 400.0 MHz:   6.0-6-6-18
  Supported Module Timing at 333.3 MHz:   5.0-5-5-15
  Supported Module Timing at 266.7 MHz:   4.0-4-4-12
  Min. Row-Activate To Row-Activate Delay (tRRD): 7.50 ns
  Write Recovery Time (tWR):              15.00 ns
  Internal write to read command delay (tWTR): 7.50 ns
  Internal read to precharge command delay (tRTP): 7.50 ns
  Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
  Minimum Refresh to Activate/Refresh Command Period (tRFC): 127.50 ns
  Address and Command Setup Time Before Clock (tIS): 0.17 ns
  Address and Command Setup Time After Clock (tIH): 0.25 ns
  Data Input Setup Time Before Strobe (tDS): 0.05 ns
  Data Input Setup Time After Strobe (tDH): 0.12 ns